Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US16831032Application Date: 2020-03-26
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Publication No.: US11664198B2Publication Date: 2023-05-30
- Inventor: Hirofumi Ohta , Hidetoshi Hanaoka , Ayuta Suzuki
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Weihrouch IP
- Priority: JP 2019066585 2019.03.29
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/68

Abstract:
A plasma processing apparatus includes a conductive mounting table, a conductive member, and a first insulating member. The conductive mounting table has a mounting portion on which a substrate is mounted and a stepped portion positioned lower than the mounting portion. The conductive member is disposed on the stepped portion and extends outward over an outer periphery of the mounting table. Further, a first insulating member is disposed on or above an upper surface of the conductive member.
Public/Granted literature
- US20200312634A1 PLASMA PROCESSING APPARATUS Public/Granted day:2020-10-01
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