Invention Grant
- Patent Title: Methods and apparatuses having strings of memory cells including a metal source
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Application No.: US15255967Application Date: 2016-09-02
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Publication No.: US11665893B2Publication Date: 2023-05-30
- Inventor: Zhenyu Lu , Roger W. Lindsay , Andrew Bicksler , Yongjun Jeff Hu , Haitao Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- The original application number of the division: US14069553 2013.11.01
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L29/66 ; H01L29/792 ; H01L27/11524 ; H01L23/528 ; H01L29/45
Abstract:
Methods for forming a string of memory cells, an apparatus having a string of memory cells, and a system are disclosed. A method for forming the string of memory cells comprises forming a metal silicide source material over a substrate. The metal silicide source material is doped. A vertical string of memory cells is formed over the metal silicide source material. A semiconductor material is formed vertically and adjacent to the vertical string of memory cells and coupled to the metal silicide source material.
Public/Granted literature
- US20160372479A1 METHODS AND APPARATUSES HAVING STRINGS OF MEMORY CELLS INCLUDING A METAL SOURCE Public/Granted day:2016-12-22
Information query
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