Invention Grant
- Patent Title: Semiconductor layer structure with a thin blocking layer
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Application No.: US16947876Application Date: 2020-08-21
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Publication No.: US11670913B2Publication Date: 2023-06-06
- Inventor: Ting Liu , Xing Li , Hery Djie
- Applicant: Lumentum Operations LLC
- Applicant Address: US CA San Jose
- Assignee: Lumentum Operations LLC
- Current Assignee: Lumentum Operations LLC
- Current Assignee Address: US CA San Jose
- Agency: Harrity & Harrity, LLP
- Main IPC: H01S5/34
- IPC: H01S5/34

Abstract:
A semiconductor layer structure may include a substrate, a blocking layer disposed over the substrate, and one or more epitaxial layers disposed over the blocking layer. The blocking layer may have a thickness of between 50 nanometers (nm) and 4000 nm. The blocking layer may be configured to suppress defects from the substrate propagating to the one or more epitaxial layers. The one or more epitaxial layers may include a quantum-well layer that includes a quantum-well intermixing region formed using a high temperature treatment.
Public/Granted literature
- US20210408766A1 SEMICONDUCTOR LAYER STRUCTURE WITH A THIN BLOCKING LAYER Public/Granted day:2021-12-30
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