- 专利标题: Method and apparatus for mitigating contamination
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申请号: US17460121申请日: 2021-08-27
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公开(公告)号: US11675272B2公开(公告)日: 2023-06-13
- 发明人: Chih-Ping Yen , Yen-Shuo Su , Chieh Hsieh , Shang-Chieh Chien , Chun-Lin Chang , Li-Jui Chen , Heng-Hsin Liu
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: McDermott Will & Emery LLP
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; H05G2/00 ; G03F7/00
摘要:
Supersonic gas jets are provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by the lithography process away from a scanner side and towards a debris collection device. The gas jets can be positioned in a variety of useful orientations, with adjustable gas flow velocity and gas density in order to prevent up to nearly 100% of the tin debris from migrating to the reticle on the scanner side.
公开/授权文献
- US20230062653A1 METHOD AND APPARATUS FOR MITIGATING CONTAMINATION 公开/授权日:2023-03-02
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