- 专利标题: High thermal conductivity vias by additive processing
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申请号: US15361399申请日: 2016-11-26
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公开(公告)号: US11676880B2公开(公告)日: 2023-06-13
- 发明人: Benjamin Stassen Cook , Archana Venugopal , Luigi Colombo , Robert Reid Doering
- 申请人: Texas Instruments Incorporated
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Andrew R. Ralston; Frank D. Cimino
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L23/367 ; H01L23/373 ; H01L21/48
摘要:
An integrated circuit has a substrate and an interconnect region disposed on the substrate. The interconnect region includes a plurality of interconnect levels. Each interconnect level includes interconnects in dielectric material. The integrated circuit includes a thermal via in the interconnect region. The thermal via extends vertically in at least one of the interconnect levels in the interconnect region. The thermal via includes a cohered nanoparticle film in which adjacent nanoparticles are cohered to each other. The thermal via has a thermal conductivity higher than dielectric material touching the thermal via. The cohered nanoparticle film is formed by a method which includes an additive process.
公开/授权文献
- US20180151471A1 HIGH THERMAL CONDUCTIVITY VIAS BY ADDITIVE PROCESSING 公开/授权日:2018-05-31
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