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公开(公告)号：US11004680B2
公开(公告)日：2021-05-11
申请号：US15361403
申请日：2016-11-26
IPC分类号： H01L23/34 , H01L23/48 , H01L23/52 , H01L21/02 , H01L23/522 , H01L23/528 , H01L23/373 , H01L21/56 , H01L23/433 , H01L23/367 , H01L23/31 , H01L23/00
摘要： A packaged electronic device includes an integrated circuit and an electrically non-conductive encapsulation material in contact with the integrated circuit. A thermal conduit extends from an exterior of the package, through the encapsulation material, to the integrated circuit. The thermal conduit has a thermal conductivity higher than the encapsulation material contacting the thermal conduit. The thermal conduit includes a cohered nanoparticle film. The cohered nanoparticle film is formed by a method which includes an additive process.
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公开(公告)号：US20180151470A1
公开(公告)日：2018-05-31
申请号：US15361394
申请日：2016-11-26
IPC分类号： H01L23/367 , H01L23/522 , H01L23/373 , H01L23/00 , H01L21/768 , H01L21/48
摘要： An integrated circuit has a substrate and an interconnect region disposed on the substrate. The interconnect region has a plurality of interconnect levels. The integrated circuit includes a thermal routing structure in the interconnect region. The thermal routing structure extends over a portion, but not all, of the integrated circuit in the interconnect region. The thermal routing structure includes a cohered nanoparticle film in which adjacent nanoparticles cohere to each other. The thermal routing structure has a thermal conductivity higher than dielectric material touching the thermal routing structure. The cohered nanoparticle film is formed by a method which includes an additive process.
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公开(公告)号：US20180151467A1
公开(公告)日：2018-05-31
申请号：US15361403
申请日：2016-11-26
IPC分类号： H01L23/367 , H01L23/31 , H01L23/522 , H01L23/528 , H01L23/373 , H01L23/00 , H01L21/56 , H01L21/48 , H01L21/02
CPC分类号： H01L21/02354 , H01L21/02288 , H01L21/56 , H01L23/3121 , H01L23/34 , H01L23/3677 , H01L23/373 , H01L23/3737 , H01L23/4334 , H01L23/5226 , H01L23/5283 , H01L24/13 , H01L24/16 , H01L24/48 , H01L24/73 , H01L2224/0401 , H01L2224/04042 , H01L2224/131 , H01L2224/16227 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/10253 , H01L2924/1033 , H01L2924/14 , H01L2924/15313 , H01L2924/014 , H01L2924/00014 , H01L2224/32245 , H01L2924/00012 , H01L2924/00
摘要： A packaged electronic device includes an integrated circuit and an electrically non-conductive encapsulation material in contact with the integrated circuit. A thermal conduit extends from an exterior of the package, through the encapsulation material, to the integrated circuit. The thermal conduit has a thermal conductivity higher than the encapsulation material contacting the thermal conduit. The thermal conduit includes a cohered nanoparticle film. The cohered nanoparticle film is formed by a method which includes an additive process.
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公开(公告)号：US09793214B1
公开(公告)日：2017-10-17
申请号：US15438174
申请日：2017-02-21
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/532 , H01L23/522 , H01L23/66
CPC分类号： H01L23/53276 , H01L23/5226 , H01L23/53214 , H01L23/53271 , H01L23/66 , H01L2223/6616
摘要： An integrated circuit includes an interconnect which includes a metal layer, a layer of graphene on at least one of the top surface of the interconnect or the bottom surface of the interconnect, and a layer of hexagonal boron nitride (hBN) on the layer of graphene, opposite from the metal layer. Dielectric material of the integrated circuit contacts the layer of hBN. The layer of graphene has one or more atomic layers of graphene. The layer of hBN is one to three atomic layers thick. The interconnect may have a lower graphene layer on the bottom surface of the metal layer with a lower hBN layer, and an upper graphene layer on the top surface of the metal layer, with an upper hBN layer.
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公开(公告)号：US10861763B2
公开(公告)日：2020-12-08
申请号：US15361397
申请日：2016-11-26
IPC分类号： H01L23/34 , H01L23/495 , H01L23/48 , H01L23/52 , H01L23/367 , H01L27/02 , H01L21/3205 , H01L21/324 , H01L21/768 , H01L23/373 , H01L23/522 , H01L23/528 , H01L23/532 , H01L21/74
摘要： An integrated circuit has a substrate which includes a semiconductor material, and an interconnect region disposed on the substrate. The integrated circuit includes a thermal routing trench in the substrate. The thermal routing trench includes a cohered nanoparticle film in which adjacent nanoparticles are cohered to each other. The thermal routing trench has a thermal conductivity higher than the semiconductor material contacting the thermal routing trench. The cohered nanoparticle film is formed by an additive process.
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公开(公告)号：US20190229051A1
公开(公告)日：2019-07-25
申请号：US16372455
申请日：2019-04-02
IPC分类号： H01L23/528 , H01L21/768 , H01L23/367 , H01L21/285 , H01L21/288 , H01L21/3205 , H01L23/48 , H01L23/31 , H01L23/522 , H01L23/532 , H01L21/324 , H01L21/3105 , H01L23/373
CPC分类号： H01L23/528 , H01L21/28556 , H01L21/28562 , H01L21/288 , H01L21/31051 , H01L21/32051 , H01L21/32055 , H01L21/324 , H01L21/76802 , H01L21/76834 , H01L21/76876 , H01L21/76879 , H01L21/76885 , H01L21/76895 , H01L23/3107 , H01L23/3677 , H01L23/373 , H01L23/481 , H01L23/5226 , H01L23/5227 , H01L23/53209 , H01L23/53276 , H01L2224/48463
摘要： An integrated circuit has a substrate and an interconnect region disposed on the substrate. The interconnect region includes a plurality of interconnect levels. Each interconnect level includes interconnects in dielectric material. The integrated circuit includes a graphitic via in the interconnect region. The graphitic via vertically connects a first interconnect in a first interconnect level to a second interconnect in a second, higher, interconnect level. The graphitic via includes a cohered nanoparticle film of nanoparticles in which adjacent nanoparticles cohere to each other, and a layer of graphitic material disposed on the cohered nanoparticle film. The nanoparticles include one or more metals suitable for catalysis of the graphitic material. The cohered nanoparticle film is formed by a method which includes an additive process. The graphitic via is electrically coupled to an active component of the integrated circuit.
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公开(公告)号：US20180151471A1
公开(公告)日：2018-05-31
申请号：US15361399
申请日：2016-11-26
IPC分类号： H01L23/367 , H01L23/522 , H01L23/373 , H01L23/00 , H01L21/768 , H01L21/48
CPC分类号： H01L23/3677 , H01L21/4882 , H01L23/3731 , H01L23/3733 , H01L23/3736
摘要： An integrated circuit has a substrate and an interconnect region disposed on the substrate. The interconnect region includes a plurality of interconnect levels. Each interconnect level includes interconnects in dielectric material. The integrated circuit includes a thermal via in the interconnect region. The thermal via extends vertically in at least one of the interconnect levels in the interconnect region. The thermal via includes a cohered nanoparticle film in which adjacent nanoparticles are cohered to each other. The thermal via has a thermal conductivity higher than dielectric material touching the thermal via. The cohered nanoparticle film is formed by a method which includes an additive process.
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公开(公告)号：US20150307355A1
公开(公告)日：2015-10-29
申请号：US14791650
申请日：2015-07-06
CPC分类号： C01B31/0266 , B03C1/005 , B03C1/0335 , B03C1/035 , B03C2201/20 , B03C2201/22 , B82Y30/00 , B82Y40/00 , C01B32/172 , C01B2202/02 , C01B2202/22 , Y10S977/751 , Y10S977/845
摘要： A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.
摘要翻译： 通过将SWNTs置于稀释流体中来分离来自半导体类型的金属单壁碳纳米管（SWNT）的过程，将SWNT暴露于偶极诱导磁场，其诱导SWNT中的磁偶极子，使得偶极子的强度取决于 包含偶极子的SWNT的导电性，定向金属SWNT，并将SWNT暴露于具有空间梯度的磁场，使得定向金属SWNT在磁场梯度中漂移，从而与半导体SWNT空间分离。 公开了一种用于排序SWNT的过程的设备。
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公开(公告)号：US20140291211A1
公开(公告)日：2014-10-02
申请号：US14305119
申请日：2014-06-16
IPC分类号： C01B31/02
CPC分类号： C01B31/0266 , B03C1/005 , B03C1/0335 , B03C1/035 , B03C2201/20 , B03C2201/22 , B82Y30/00 , B82Y40/00 , C01B32/172 , C01B2202/02 , C01B2202/22 , Y10S977/751 , Y10S977/845
摘要： A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.
摘要翻译： 通过将SWNTs置于稀释流体中来分离来自半导体类型的金属单壁碳纳米管（SWNT）的过程，将SWNT暴露于偶极诱导磁场，其诱导SWNT中的磁偶极子，使得偶极子的强度取决于 包含偶极子的SWNT的导电性，定向金属SWNT，并将SWNT暴露于具有空间梯度的磁场，使得定向金属SWNT在磁场梯度中漂移，从而与半导体SWNT空间分离。 公开了一种用于排序SWNT的过程的设备。
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公开(公告)号：US20210272804A1
公开(公告)日：2021-09-02
申请号：US17315524
申请日：2021-05-10
IPC分类号： H01L21/02 , H01L23/522 , H01L23/528 , H01L23/373 , H01L21/56 , H01L23/433 , H01L23/367
摘要： A packaged electronic device includes an integrated circuit and an electrically non-conductive encapsulation material in contact with the integrated circuit. A thermal conduit extends from an exterior of the package, through the encapsulation material, to the integrated circuit. The thermal conduit has a thermal conductivity higher than the encapsulation material contacting the thermal conduit. The thermal conduit includes a cohered nanoparticle film. The cohered nanoparticle film is formed by a method which includes an additive process.
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