Invention Grant
- Patent Title: Semiconductor device including active pattern having a protrusion portion on a base portion and method for manufacturing the same
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Application No.: US17464102Application Date: 2021-09-01
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Publication No.: US11677029B2Publication Date: 2023-06-13
- Inventor: Sungmin Kim , Dongwon Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20210039298 2021.03.26
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/36 ; H01L29/06
Abstract:
A semiconductor device including an active pattern, which has a base portion and a protrusion portion on the base portion, and a source/drain pattern provided on the base portion may be provided. The protrusion portion may include a first curved pattern portion, a first flat pattern portion disposed at a lower level than the first curved pattern portion, and a second curved pattern portion disposed at a lower level than the first flat pattern portion. Each of the first and second curved pattern portions has a curved side wall, and the first flat pattern portion has a flat side wall. The germanium concentration of the first curved pattern portion is a higher than the germanium concentration of the first flat pattern portion, and the germanium concentration of the first flat pattern portion is higher than the germanium concentration of the second curved pattern portion.
Public/Granted literature
- US20220310842A1 SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-09-29
Information query
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