Invention Grant
- Patent Title: Structure forming method and device
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Application No.: US16776098Application Date: 2020-01-29
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Publication No.: US11679976B2Publication Date: 2023-06-20
- Inventor: Shogo Inaba
- Applicant: SEIKO EPSON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Workman Nydegger
- Priority: JP 2019015603 2019.01.31
- Main IPC: G01P15/125
- IPC: G01P15/125 ; B81C1/00 ; B81B3/00

Abstract:
A structure forming method according to an aspect is a structure forming method for forming a first hole and a second hole having width smaller than width of the first hole in a substrate with dry etching and forming a structure. The structure forming method includes forming an etching mask on the substrate, etching a portion of the etching mask overlapping a first hole forming region where the first hole is formed, etching a portion of the etching mask overlapping a second hole forming region where the second hole is formed, and performing the dry etching of the substrate using the etching mask as a mask.
Public/Granted literature
- US20200247666A1 STRUCTURE FORMING METHOD AND DEVICE Public/Granted day:2020-08-06
Information query
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