Invention Grant
- Patent Title: Fabrication of films having controlled stoichiometry using molecular beam epitaxy
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Application No.: US17219970Application Date: 2021-04-01
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Publication No.: US11680337B2Publication Date: 2023-06-20
- Inventor: Yong Liang , John Elliott Ortmann, Jr. , John Berg , Ann Melnichuk
- Applicant: Psiquantum, Corp.
- Applicant Address: US CA Palo Alto
- Assignee: Psiquantum, Corp.
- Current Assignee: Psiquantum, Corp.
- Current Assignee Address: US CA Palo Alto
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: C30B23/02
- IPC: C30B23/02 ; C30B23/00 ; G06T7/00 ; C30B29/32

Abstract:
A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.
Public/Granted literature
- US20210310152A1 FABRICATION OF FILMS HAVING CONTROLLED STOICHIOMETRY USING MOLECULAR BEAM EPITAXY Public/Granted day:2021-10-07
Information query