Invention Grant
- Patent Title: High bandwidth memory device and system device having the same
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Application No.: US17728107Application Date: 2022-04-25
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Publication No.: US11681457B2Publication Date: 2023-06-20
- Inventor: Jun Gyu Lee , Reum Oh , Ki Heung Kim , Moon Hee Oh
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20180028456 2018.03.12 KR 20180094449 2018.08.13
- The original application number of the division: US17173779 2021.02.11
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C5/04 ; G06F3/06 ; G06F12/02 ; G06F13/16 ; G11C7/10

Abstract:
According to some embodiments, for a memory device including a base die and a stack of memory dies including a plurality of memory dies stacked on the base die, the base die including a plurality of first input/output (i/o) terminals that are command/address and data terminals and a plurality of second i/o terminals that are direct access terminals, a method includes receiving at the plurality of first i/o terminals a command/address, a clock signal, and data; first transmitting the command/address, clock signal, and data received by the plurality of first i/o terminals from the base die to the stack of memory dies; and second transmitting at least part of one or more of the command/address, clock signal, and data received by a set of the plurality of first i/o terminals through a circuit of the base die to the plurality of second i/o terminals.
Public/Granted literature
- US20220244882A1 HIGH BANDWIDTH MEMORY DEVICE AND SYSTEM DEVICE HAVING THE SAME Public/Granted day:2022-08-04
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