Invention Grant
- Patent Title: Method for manufacturing a semiconductor device
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Application No.: US17178676Application Date: 2021-02-18
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Publication No.: US11686998B2Publication Date: 2023-06-27
- Inventor: Jeong-Hun Seo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR 20180069207 2018.06.15
- The original application number of the division: US16223175 2018.12.18
- Main IPC: G03F1/84
- IPC: G03F1/84 ; G03F1/36 ; G06T7/00 ; G01N21/956

Abstract:
A method for manufacturing a semiconductor device includes designing a layout, manufacturing a photomask based on the designed layout, and performing a photolithography process using the photomask to form a pattern on a substrate. The manufacturing of the photomask includes preparing the photomask including first and second chip regions, extracting first and second images from the first and second chip regions, respectively, averaging the first and second images to generate a preliminary standard image including a difference region between the first and second images, inserting a normal image into the difference region based on the layout to generate a standard image, and comparing each of the first and second images with the standard image to detect a defect of the first and/or second chip regions.
Public/Granted literature
- US20210173300A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2021-06-10
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