- 专利标题: Electron emitter and method of fabricating same
-
申请号: US17549854申请日: 2021-12-13
-
公开(公告)号: US11688579B2公开(公告)日: 2023-06-27
- 发明人: Juying Dou , Zheng Fan , Tzu-Yi Kuo , Zhong-wei Chen
- 申请人: ASML Netherlands B.V.
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- 主分类号: H01J37/073
- IPC分类号: H01J37/073 ; H01J37/065 ; H01J1/304 ; H01J1/14 ; H01J9/02 ; H01J9/04 ; H01J37/26
摘要:
Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.
公开/授权文献
- US20220189725A1 ELECTRON EMITTER AND METHOD OF FABRICATING SAME 公开/授权日:2022-06-16
信息查询