Invention Grant
- Patent Title: Physical vapor deposition apparatus and method thereof
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Application No.: US17876489Application Date: 2022-07-28
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Publication No.: US11688591B2Publication Date: 2023-06-27
- Inventor: Chia-Hsi Wang , Kun-Che Ho , Yen-Yu Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- The original application number of the division: US16572186 2019.09.16
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C23C14/35 ; H01L21/02
Abstract:
A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.
Public/Granted literature
- US20220367161A1 PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD THEREOF Public/Granted day:2022-11-17
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