Invention Grant
- Patent Title: Semiconductor device assembly with through-mold cooling channel formed in encapsulant
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Application No.: US17140610Application Date: 2021-01-04
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Publication No.: US11688664B2Publication Date: 2023-06-27
- Inventor: Bradley R. Bitz , Xiao Li , Jaspreet S. Gandhi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- The original application number of the division: US15181212 2016.06.13
- Main IPC: H01L23/427
- IPC: H01L23/427 ; H01L23/42 ; H01L23/433 ; H01L23/46 ; H01L23/473 ; H01L25/065

Abstract:
Semiconductor device assemblies having stacked semiconductor dies and thermal transfer devices that include vapor chambers are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a base region, at least one second semiconductor die at the base region, and a thermal transfer device attached to the first and second dies. The thermal transfer device includes an encapsulant at least partially surrounding the second die and a via formed in the encapsulant. The encapsulant at least partially defines a cooling channel that is adjacent to a peripheral region of the first die. The via includes a working fluid and/or a solid thermal conductor that at least partially fills the channel.
Public/Granted literature
Information query
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