- Patent Title: Semiconductor devices having variously-shaped source/drain patterns
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Application No.: US17131977Application Date: 2020-12-23
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Publication No.: US11688781B2Publication Date: 2023-06-27
- Inventor: Hyun-Kwan Yu , Min-Hee Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR 20180067354 2018.06.12
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L27/088 ; H01L21/8234 ; H01L21/762

Abstract:
A semiconductor device comprising a plurality of active patterns on a substrate. The semiconductor device may include a device isolation layer defining the plurality of active patterns, a gate electrode extending across the plurality of active patterns, and a source/drain pattern on the active patterns. The plurality of active patterns may comprise a first active pattern and a second active pattern. The source/drain pattern comprises a first part on the first active pattern, a second part on the second active pattern, and a third part extending from the first part and along an upper portion of the first active pattern. The device isolation layer comprises a first outer segment on a sidewall of the first active pattern below the source/drain pattern. A lowermost level of a bottom surface of the third part may be lower than an uppermost level of a top surface of the first outer segment.
Public/Granted literature
- US20210111259A1 SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS Public/Granted day:2021-04-15
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