Invention Grant
- Patent Title: Memory device including different dielectric structures between blocks
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Application No.: US17146193Application Date: 2021-01-11
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Publication No.: US11700732B2Publication Date: 2023-07-11
- Inventor: Paolo Tessariol , David H. Wells , Umberto Maria Meotto
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H10B43/50 ; H01L23/522 ; H10B41/27 ; H10B41/50 ; H10B43/27

Abstract:
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes levels of conductive materials interleaved with levels of dielectric materials; memory cell strings including respective pillars extending through the levels of conductive materials and the levels of dielectric materials; a first dielectric structure formed in a first slit through the levels of conductive materials and the levels of dielectric materials; a second dielectric structure formed in a second slit through the levels of conductive materials and the levels of dielectric materials; the first dielectric structure and the second dielectric structure separating the levels of conductive materials, the levels of dielectric materials, and the pillars into separate portions, and the first and second dielectric structures including different widths.
Public/Granted literature
- US20220223613A1 MEMORY DEVICE INCLUDING DIFFERENT DIELECTRIC STRUCTURES BETWEEN BLOCKS Public/Granted day:2022-07-14
Information query
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