Invention Grant
- Patent Title: Semiconductor package with conductive bump on conductive post including an intermetallic compound layer
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Application No.: US17018259Application Date: 2020-09-11
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Publication No.: US11705418B2Publication Date: 2023-07-18
- Inventor: Hyunsoo Chung , Taewon Yoo , Myungkee Chung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20190176181 2019.12.27
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L25/00 ; H01L21/768 ; H01L23/00 ; H01L23/532 ; H01L23/31

Abstract:
A semiconductor package includes a semiconductor chip including a contact pad on an active surface, a first insulating layer on the active surface including a first opening that exposes the contact pad, a redistribution layer connected to the contact pad and extending to an upper surface of the first insulating layer, a second insulating layer on the first insulating layer and including a second opening that exposes a contact region of the redistribution layer, a conductive post on the contact region, an encapsulation layer on the second insulating layer and surrounding the conductive post, and a conductive bump on an upper surface of the conductive post. The conductive post includes an intermetallic compound (IMC) layer in contact with the conductive bump. An upper surface of the IMC layer is lower than an upper surface of the encapsulation layer.
Public/Granted literature
- US20210202423A1 SEMICONDUCTOR PACKAGE Public/Granted day:2021-07-01
Information query
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