Invention Grant
- Patent Title: Graded doping in power devices
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Application No.: US17169916Application Date: 2021-02-08
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Publication No.: US11705490B2Publication Date: 2023-07-18
- Inventor: Ashish Pal , El Mehdi Bazizi , Siddarth Krishnan , Xing Chen , Lan Yu , Tyler Sherwood
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/36 ; H01L29/872 ; H01L29/66 ; H01L21/285 ; H01L21/3065 ; H01L21/265

Abstract:
Exemplary methods of forming a semiconductor structure may include forming a doped silicon layer on a semiconductor substrate. A level of doping may be increased at an increasing distance from the semiconductor substrate. The methods may include etching the doped silicon layer to define a trench extending to the semiconductor substrate. The doped silicon layer may define a sloping sidewall of the trench. The trench may be characterized by a depth of greater than or about 30 μm. The methods may include lining the trench with a first oxide material. The methods may include depositing a second oxide material within the trench. The methods may include forming a contact to produce a power device.
Public/Granted literature
- US20220254886A1 GRADED DOPING IN POWER DEVICES Public/Granted day:2022-08-11
Information query
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