Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US17190871Application Date: 2021-03-03
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Publication No.: US11706921B2Publication Date: 2023-07-18
- Inventor: Yosuke Murakami , Satoshi Nagashima , Nobuyuki Momo , Takayuki Ishikawa , Yusuke Arayashiki
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 20154398 2020.09.15
- Main IPC: H10B43/27
- IPC: H10B43/27 ; H10B41/27 ; H10B41/35 ; G11C7/18 ; H01L23/00 ; H10B41/10 ; H10B43/10 ; H10B43/35

Abstract:
A semiconductor storage device includes a substrate, a first wiring, a second wiring, a third wiring, a fourth wiring, a charge storage unit. The first wiring extends in a first direction along a surface of the substrate. The second wiring is aligned with the first wiring in a second direction intersecting with the first direction and extends in the first direction. The third wiring is in contact with the first wiring and the second wiring and includes a semiconductor. The fourth wiring is located between the first wiring and the second wiring, extends in a third direction intersecting with the first direction and the second direction, and is aligned with the third wiring in at least the first direction. The charge storage unit is located between the third wiring and the fourth wiring.
Public/Granted literature
- US20220085058A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2022-03-17
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