- 专利标题： Electrode structure and method of manufacturing the same, and secondary battery including the electrode structure
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申请号： US16658635申请日： 2019-10-21
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公开(公告)号： US11715823B2公开(公告)日： 2023-08-01
- 发明人: Hwiyeol Park , Huisu Jeong , Kyounghwan Kim , Jeongkuk Shon , Junhyeong Lee , Sungjin Lim , Jin S. Heo
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Cantor Colburn LLP
- 优先权： KR 20180143898 2018.11.20
- 主分类号： H01M4/36
- IPC分类号： H01M4/36 ; H01M4/139 ; H01M4/485 ; H01M4/58 ; H01M10/0525 ; H01M4/02 ; H01M4/04
摘要：
An electrode structure includes a base layer including a first active material, and a plurality of active material plates on a first surface of the base layer and spaced apart from one another, the plurality of active material plates including a second active material. An active material density of the base layer is less than an active material density of an active material plate of the plurality of active material plates.
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