Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17561989Application Date: 2021-12-26
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Publication No.: US11721552B2Publication Date: 2023-08-08
- Inventor: Feng-Yi Chang , Yu-Cheng Tung , Fu-Che Lee
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu; CN Quanzhou
- Agent Winston Hsu
- Priority: CN 1810875849.1 2018.08.03
- The original application number of the division: US16136265 2018.09.20
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/033 ; H10B12/00 ; H01L21/3213

Abstract:
A semiconductor device includes a substrate and a material disposed on the substrate. The material layer includes plural first patterns arranged parallel and separately in an array within a first region of the substrate, and plural second patterns parallel and separately disposed at two opposite sides of the first patterns, and plural third patterns parallel and separately disposed at another two opposite sides of the first patterns, wherein each of the third patterns has a relative greater dimension than that of each of the first patterns.
Public/Granted literature
- US20220122845A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-04-21
Information query
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