Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a device including tiers of materials located one over another, the tiers of materials including respective memory cells and control gates for the memory cells. The control gates include respective portions that collectively form part of a staircase structure. The staircase structure includes first regions and second regions coupled to the first regions. The second regions include respective sidewalls in which a portion of each of the first regions and a portion of each of the second regions are part of a respective control gate of the control gates. The device also includes conductive pads electrically separated from each other and located on the first regions of the staircase structure, and conductive contacts contacting the conductive pads.