Invention Grant
- Patent Title: Varactor with meander diffusion region
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Application No.: US17849718Application Date: 2022-06-27
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Publication No.: US11721772B2Publication Date: 2023-08-08
- Inventor: Purakh Raj Verma , Su Xing
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: CN 1911240649.X 2019.12.06
- The original application number of the division: US16739022 2020.01.09
- Main IPC: H01L29/93
- IPC: H01L29/93 ; H01L29/06 ; H01L29/66

Abstract:
A varactor structure includes a substrate. A first and second gate structure are disposed on the substrate. The first and second gate structures each include a base portion and a plurality of line portions connected thereto. The line portions of each of the first and second gate structures is alternately arranged. A meander diffusion region is formed in the substrate and surrounds the line portions. A first set of contact plugs is planned with at least two columns or rows and disposed on the base portions of the first and second gate structures. A second set of contact plugs is planned with at least two columns or rows and disposed on the meander diffusion region. A first conductive layer is disposed on a top end of the first set of contact plugs. A second conductive layer is disposed on a top end of the second set of contact plugs.
Public/Granted literature
- US20220328700A1 FABRICATION METHOD OF VARACTOR STRUCTURE Public/Granted day:2022-10-13
Information query
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