Invention Grant
- Patent Title: Capacitor structure and method for manufacturing same
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Application No.: US17439586Application Date: 2021-06-21
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Publication No.: US11723190B2Publication Date: 2023-08-08
- Inventor: Chaojun Sheng , Yong Lu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2011105560.5 2020.10.15
- International Application: PCT/CN2021/101292 2021.06.21
- International Announcement: WO2022/077947A 2022.04.21
- Date entered country: 2021-09-15
- Main IPC: H10B12/00
- IPC: H10B12/00 ; H01L49/02

Abstract:
The present disclosure provides a capacitor structure and a method for manufacturing same. The capacitor structure includes: a substrate, a first capacitor contact layer, a bottom electrode layer, a capacitor dielectric layer, and a top electrode layer, where the first capacitor contact layer is arranged on the substrate in an array manner, the bottom electrode layer surrounds a side wall of the first capacitor contact layer and extends in a direction of the first capacitor contact layer away from the substrate, the capacitor dielectric layer covers an upper surface of the substrate, a surface of the bottom electrode layer and an upper surface of the first capacitor contact layer, and the top electrode layer covers a surface of the capacitor dielectric layer.
Public/Granted literature
- US20220302122A1 CAPACITOR STRUCTURE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2022-09-22
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