Invention Grant
- Patent Title: Integrated micro-electromechanical device of semiconductor material having a diaphragm
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Application No.: US16442199Application Date: 2019-06-14
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Publication No.: US11724932B2Publication Date: 2023-08-15
- Inventor: Alberto Pagani , Alessandro Motta
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Slater Matsil, LLP
- Priority: IT 2014A001068 2014.12.18
- The original application number of the division: US14856707 2015.09.17
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B7/00 ; B81B3/00 ; G01L9/00

Abstract:
A method for making an integrated micro-electromechanical device includes forming a first body of semiconductor material having a first face and a second face opposite the first face. The first body includes a buried cavity forming a diaphragm delimited between the buried cavity and the first face. The diaphragm is monolithic with the first body. The method further includes forming at least one first magnetic via extending between the second face and the buried cavity of the first body, forming a first magnetic region extending over the first face of the first body, and forming a first coil extending over the second face of the first body and being magnetically coupled to the first magnetic via.
Public/Granted literature
- US20190292045A1 Integrated Micro-Electromechanical Device of Semiconductor Material Having a Diaphragm Public/Granted day:2019-09-26
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