Invention Grant
- Patent Title: Semiconductor device and semiconductor package including penetration via structure
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Application No.: US17316970Application Date: 2021-05-11
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Publication No.: US11728245B2Publication Date: 2023-08-15
- Inventor: Jubin Seo , Kwangjin Moon , Kunsang Park , Myungjoo Park , Sujeong Park , Jaewon Hwang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20200096758 2020.08.03
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/48 ; H01L23/498 ; H01L23/538 ; H01L23/00 ; H01L25/065 ; H01L23/522 ; H01L23/532

Abstract:
A semiconductor device includes a semiconductor substrate having a first surface and a second surface, which are opposite to each other, an active pattern protruding from the first surface of the semiconductor substrate, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, a power delivery network disposed on the second surface of the semiconductor substrate, and a penetration via structure penetrating the semiconductor substrate and electrically connected to the power rail and the power delivery network. The penetration via structure includes a first conductive pattern electrically connected to the power rail and a second conductive pattern electrically connected to the power delivery network. The first conductive pattern includes a material different from the second conductive pattern.
Public/Granted literature
- US20220037236A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE Public/Granted day:2022-02-03
Information query
IPC分类: