Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17231111Application Date: 2021-04-15
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Publication No.: US11728300B2Publication Date: 2023-08-15
- Inventor: Woon-Ki Lee , Jae-Won Kim , Jongsun Jung , Chul-Joong Park , Ki-Bum Chun , Shivashanker Reddy Kesireddy , Sangwoo Pyo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20200107830 2020.08.26
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H01L23/00

Abstract:
A semiconductor device includes a semiconductor substrate, an integrated device ort the semiconductor substrate, a first redistribution layer on the semiconductor substrate, the first redistribution layer having first conductive patterns electrically connected to the integrated device, a second redistribution layer on the first redistribution layer, the second redistribution layer having second conductive patterns connected to the first conductive patterns, and third conductive patterns on a top surface of the second redistribution layer. The third conductive patterns include pads connected to the second conductive patterns, under-bump pads spaced apart from the pads, a grouping pattern between the pads and an outer edge of the second redistribution layer, and wiring lines that connect the under-bump pads to the pads and connect the pads to the grouping pattern.
Public/Granted literature
- US20220068853A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-03-03
Information query
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