Invention Grant
- Patent Title: Dielectric lattice with passive component circuits
-
Application No.: US17248390Application Date: 2021-01-22
-
Publication No.: US11728331B2Publication Date: 2023-08-15
- Inventor: Gary Horst Loechelt , Marco Fuhrmann
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Scottsdale
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L49/02

Abstract:
In a general aspect, a semiconductor device can include a semiconductor region, an active region disposed in the semiconductor region, a termination region disposed on the semiconductor region and adjacent to the active region, and a resistor disposed in the termination region. The resistor can include a trench, a conductive material disposed in the trench, and a first cavity separating the trench from the semiconductor region. A portion of the first cavity can be disposed between a bottom of the trench and the semiconductor region. The resistor can further include a second cavity separating the trench from the semiconductor region.
Public/Granted literature
- US20220238512A1 DIELECTRIC LATTICE WITH PASSIVE COMPONENT CIRCUITS Public/Granted day:2022-07-28
Information query
IPC分类: