Invention Grant
- Patent Title: Method of manufacturing an integrated circuit device
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Application No.: US17494275Application Date: 2021-10-05
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Publication No.: US11728347B2Publication Date: 2023-08-15
- Inventor: Weonhong Kim , Pilkyu Kang , Yuichiro Sasaki , Sungkeun Lim , Yongho Ha , Sangjin Hyun , Kughwan Kim , Seungha Oh
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR 20190059129 2019.05.20
- The original application number of the division: US16807410 2020.03.03
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/762 ; H01L27/02 ; H01L29/78

Abstract:
An integrated circuit device includes an embedded insulation layer, a semiconductor layer on the embedded insulation layer, the semiconductor layer having a main surface, and a plurality of fin-type active areas protruding from the main surface to extend in a first horizontal direction and in parallel with one another, a separation insulation layer separating the semiconductor layer into at least two element regions adjacent to each other in a second horizontal direction intersecting the first horizontal direction, source/drain regions on the plurality of fin-type active areas, a first conductive plug on and electrically connected to the source/drain regions, a buried rail electrically connected to the first conductive plug while penetrating through the separation insulation layer and the semiconductor layer, and a power delivery structure arranged in the embedded insulation layer, the power delivery structure being in contact with and electrically connected to the buried rail.
Public/Granted literature
- US20220028895A1 METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT DEVICE Public/Granted day:2022-01-27
Information query
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