- 专利标题： Semiconductor device including a Fin-FET and method of manufacturing the same
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申请号： US17671405申请日： 2022-02-14
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公开(公告)号： US11728414B2公开(公告)日： 2023-08-15
- 发明人: Yasutoshi Okuno , Cheng-Yi Peng , Ziwei Fang , I-Ming Chang , Akira Mineji , Yu-Ming Lin , Meng-Hsuan Hsiao
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 分案原申请号： US15665230 2017.07.31
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L21/203 ; H01L27/092 ; H01L21/8238 ; H01L29/165 ; H01L27/12 ; H01L21/84 ; H01L29/161
摘要：
A method of forming a semiconductor device comprises forming a fin structure; forming a source/drain structure in the fin structure; and forming a gate electrode over the fin structure. The source/drain structure includes Si1−x−yM1xM2y, where M1 includes Sn, M2 is one or more of P and As, 0.01≤x≤0.1, and 0.01≤y≤0.
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