A semiconductor memory device capable of satisfying multiple reliability conditions and multiple performance requirements is provided. A variable resistance memory of the disclosure makes it possible to write data in a memory array by changing a write condition according to the type of a write command from the outside. If the write command is an endurance-related command, an endurance algorithm is selected and data is written in an endurance storage area. If the write command is a retention-related command, a retention algorithm is selected and data is written in a retention storage area.