- 专利标题： Vertically-oriented complementary transistor
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申请号： US17094904申请日： 2020-11-11
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公开(公告)号： US11735669B2公开(公告)日： 2023-08-22
- 发明人: Chi-Yi Chuang , Hou-Yu Chen , Kuan-Lun Cheng
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02 ; H01L21/8234 ; H01L29/66
摘要：
A semiconductor device according to the present disclosure includes a first transistor and a second transistor disposed over the first transistor. The first transistor includes a plurality of channel members vertically stacked over one another, and a first source/drain feature adjoining the plurality of channel members. The second transistor includes a fin structure, and a second source/drain feature adjoining the fin structure. The semiconductor device further includes a conductive feature electrically connecting the first source/drain feature and the second source/drain feature.
公开/授权文献
- US20220037528A1 VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR 公开/授权日：2022-02-03
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