Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US17361854Application Date: 2021-06-29
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Publication No.: US11741285B2Publication Date: 2023-08-29
- Inventor: Giyoung Yang , Ingyum Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20200103161 2020.08.18
- Main IPC: G06F30/392
- IPC: G06F30/392 ; G06F30/396 ; H01L27/088

Abstract:
A semiconductor device includes a substrate having an active region, first standard cells arranged in a first row on the active region, second standard cells arranged in a second row on the active region and having a first boundary with the first standard cells, a third standard cells arranged in a third row on the active region and having a second boundary with the first standard cells, and a plurality of power supply lines, respectively arranged along boundaries. Each of the first to third standard cells includes a plurality of fin patterns extending in the first direction, and the plurality of fin patterns are arranged in a second direction, so as not to be disposed on at least one boundary, among the first and second boundaries.
Public/Granted literature
- US20220058327A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-02-24
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