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公开(公告)号：US20220058327A1
公开(公告)日：2022-02-24
申请号：US17361854
申请日：2021-06-29
发明人： Giyoung Yang , Ingyum Kim
IPC分类号： G06F30/392 , H01L27/088 , G06F30/396
摘要： A semiconductor device includes a substrate having an active region, first standard cells arranged in a first row on the active region, second standard cells arranged in a second row on the active region and having a first boundary with the first standard cells, a third standard cells arranged in a third row on the active region and having a second boundary with the first standard cells, and a plurality of power supply lines, respectively arranged along boundaries. Each of the first to third standard cells includes a plurality of fin patterns extending in the first direction, and the plurality of fin patterns are arranged in a second direction, so as not to be disposed on at least one boundary, among the first and second boundaries.
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公开(公告)号：US11948932B2
公开(公告)日：2024-04-02
申请号：US17528242
申请日：2021-11-17
发明人： Hakchul Jung , Ingyum Kim , Giyoung Yang , Jaewoo Seo
IPC分类号： H01L27/02 , H01L29/06 , H01L29/423 , H01L29/786
CPC分类号： H01L27/0207 , H01L29/0665 , H01L29/42392 , H01L29/78696
摘要： An integrated circuit includes a standard cell including a first active region extending in a first direction and having a first width, and a filler cell including a second active region of a same type as that of the first active region and being adjacent to the standard cell in the first direction, the second active region extending in the first direction and having a second width which is greater than the first width, wherein the standard cell further includes a first tapering portion of the same type as that of the first active region, the first tapering portion being arranged between the first active region and the second active region.
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公开(公告)号：US20230268412A1
公开(公告)日：2023-08-24
申请号：US18049036
申请日：2022-10-24
发明人： Hakchul Jung , Garoom Kim , Ingyum Kim , Jiyun Han
IPC分类号： H01L29/423 , H01L29/78 , H01L29/06 , H01L29/786 , H01L23/528 , H01L29/778
CPC分类号： H01L29/42392 , H01L29/7851 , H01L29/0673 , H01L29/78696 , H01L23/5283 , H01L29/778
摘要： A semiconductor device includes a substrate including a first device region and a second device region, a first active pattern on the first device region, a second active pattern, which has a width smaller than the first active pattern, on the second device region, a first channel pattern on the first active pattern, a first source/drain pattern connected to the first channel pattern, a second channel pattern on the second active pattern, a second source/drain pattern connected to the second channel pattern, and a gate electrode that extends from the first channel pattern to the second channel pattern in a first direction. The first channel pattern includes a plurality of semiconductor patterns, which are vertically stacked and spaced apart from each other. The second channel pattern protrudes vertically from the second active pattern.
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公开(公告)号：US20240203973A1
公开(公告)日：2024-06-20
申请号：US18591089
申请日：2024-02-29
发明人： Hakchul Jung , Ingyum Kim , Giyoung Yang , Jaewoo Seo
IPC分类号： H01L27/02 , H01L29/06 , H01L29/423 , H01L29/786
CPC分类号： H01L27/0207 , H01L29/0665 , H01L29/42392 , H01L29/78696
摘要： An integrated circuit includes a standard cell including a first active region extending in a first direction and having a first width, and a filler cell including a second active region of a same type as that of the first active region and being adjacent to the standard cell in the first direction, the second active region extending in the first direction and having a second width which is greater than the first width, wherein the standard cell further includes a first tapering portion of the same type as that of the first active region, the first tapering portion being arranged between the first active region and the second active region.
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公开(公告)号：US20230359797A1
公开(公告)日：2023-11-09
申请号：US18224337
申请日：2023-07-20
发明人： Giyoung Yang , Ingyum Kim
IPC分类号： G06F30/392 , G06F30/396 , H01L27/088
CPC分类号： G06F30/392 , G06F30/396 , H01L27/0886
摘要： A semiconductor device includes a substrate having an active region, first standard cells arranged in a first row on the active region, second standard cells arranged in a second row on the active region and having a first boundary with the first standard cells, a third standard cells arranged in a third row on the active region and having a second boundary with the first standard cells, and a plurality of power supply lines, respectively arranged along boundaries. Each of the first to third standard cells includes a plurality of fin patterns extending in the first direction, and the plurality of fin patterns are arranged in a second direction, so as not to be disposed on at least one boundary, among the first and second boundaries.
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公开(公告)号：US11741285B2
公开(公告)日：2023-08-29
申请号：US17361854
申请日：2021-06-29
发明人： Giyoung Yang , Ingyum Kim
IPC分类号： G06F30/392 , G06F30/396 , H01L27/088
CPC分类号： G06F30/392 , G06F30/396 , H01L27/0886
摘要： A semiconductor device includes a substrate having an active region, first standard cells arranged in a first row on the active region, second standard cells arranged in a second row on the active region and having a first boundary with the first standard cells, a third standard cells arranged in a third row on the active region and having a second boundary with the first standard cells, and a plurality of power supply lines, respectively arranged along boundaries. Each of the first to third standard cells includes a plurality of fin patterns extending in the first direction, and the plurality of fin patterns are arranged in a second direction, so as not to be disposed on at least one boundary, among the first and second boundaries.
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公开(公告)号：US20220310586A1
公开(公告)日：2022-09-29
申请号：US17528242
申请日：2021-11-17
发明人： Hakchul Jung , Ingyum Kim , Giyoung Yang , Jaewoo Seo
IPC分类号： H01L27/02
摘要： An integrated circuit includes a standard cell including a first active region extending in a first direction and having a first width, and a filler cell including a second active region of a same type as that of the first active region and being adjacent to the standard cell in the first direction, the second active region extending in the first direction and having a second width which is greater than the first width, wherein the standard cell further includes a first tapering portion of the same type as that of the first active region, the first tapering portion being arranged between the first active region and the second active region.
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