- 专利标题: Backplane, preparation method with dual damascene steps
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申请号: US16920401申请日: 2020-07-02
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公开(公告)号: US11742467B2公开(公告)日: 2023-08-29
- 发明人: Zhiwei Liang , Wenqian Luo , Yingwei Liu , Ke Wang , Shengguang Ban , Zhanfeng Cao
- 申请人: BOE Technology Group Co., Ltd.
- 申请人地址: CN Beijing
- 专利权人: BOE Technology Group Co., Ltd.
- 当前专利权人: BOE Technology Group Co., Ltd.
- 当前专利权人地址: CN Beijing
- 代理机构: Ling and Yang Intellectual Property
- 代理商 Ling Wu; Stephen Yang
- 优先权: CN 1910708843.X 2019.08.01
- 主分类号: H01L33/62
- IPC分类号: H01L33/62 ; H01L23/00
摘要:
A preparation method of a backplane includes: forming an insulating structure layer having a groove on a base substrate by a mask exposure process, the groove being used for accommodating a metal trace; and repeating a metal sub-layer forming step including an ashing process and a wet etching process multiple times to form the metal trace positioned in the groove.
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