Invention Grant
- Patent Title: Fine grain level memory power consumption control mechanism
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Application No.: US17744615Application Date: 2022-05-13
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Publication No.: US11748249B2Publication Date: 2023-09-05
- Inventor: Liang Yin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Renaissance IP Law Group LLP
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G06F12/00 ; G06F1/3234 ; G06F1/3225 ; G11C5/04

Abstract:
According to one general aspect, an apparatus may include a memory module. The memory module may include a plurality of memory banks configured to store data. The memory module may include a plurality of memory bank power down controllers, each configured to place one or more respective memory bank(s) in a power down mode. The memory module may include a memory module command interface configured to receive a handshake command from a memory controller, wherein the handshake command comprises a command to remove an indicated memory bank from power down mode.
Public/Granted literature
- US20220276955A1 FINE GRAIN LEVEL MEMORY POWER CONSUMPTION CONTROL MECHANISM Public/Granted day:2022-09-01
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