- 专利标题: Predictive data storage hierarchical memory systems and methods
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申请号: US17411719申请日: 2021-08-25
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公开(公告)号: US11748262B2公开(公告)日: 2023-09-05
- 发明人: Anton Korzh
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Fletcher Yoder, P.C.
- 主分类号: G06F12/08
- IPC分类号: G06F12/08 ; G06F12/0802 ; G06N20/00 ; G06F3/06
摘要:
Techniques for implementing an apparatus, which includes a memory system that provides data storage via multiple hierarchical memory levels, are provided. The memory system includes a cache that implements a first memory level and a memory array that implements a second memory level higher than the first memory level. Additionally, the memory system includes one or more memory controllers that determine a predicted data access pattern expected to occur during an upcoming control horizon, based at least in part on first context of first data to be stored in the memory sub-system, second context of second data previously stored in the memory system, or both, and control what one or more memory levels of the multiple hierarchical memory levels implemented in the memory system in which to store the first data, the second data, or both based at least in part on the predicted data access pattern.
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