Invention Grant
- Patent Title: Method and structure for mandrel and spacer patterning
-
Application No.: US17229736Application Date: 2021-04-13
-
Publication No.: US11748540B2Publication Date: 2023-09-05
- Inventor: Chung-Ming Wang , Chih-Hsiung Peng , Chi-Kang Chang , Kuei-Shun Chen , Shih-Chi Fu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- The original application number of the division: US14801383 2015.07.16
- Main IPC: G06F30/39
- IPC: G06F30/39 ; G06F30/398 ; H01L27/088 ; H01L29/06 ; H01L21/8234 ; H01L27/02 ; G06F111/20

Abstract:
A method includes forming a first mandrel pattern and a second mandrel pattern. The first mandrel pattern includes at least first and second mandrels for a mandrel-spacer double patterning process. The second mandrel pattern includes at least a third mandrel inserted between the first and second mandrels. The first mandrel pattern and the second mandrel pattern include a same material. The first and second mandrels are merged together with the third mandrel to form a single pattern.
Public/Granted literature
- US20210232747A1 Method and Structure for Mandrel and Spacer Patterning Public/Granted day:2021-07-29
Information query