- 专利标题： Capacitor including perovskite material, semiconductor device including the capacitor, and method of manufacturing the capacitor
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申请号： US17851836申请日： 2022-06-28
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公开(公告)号： US11749713B2公开(公告)日： 2023-09-05
- 发明人: Jeongil Bang , Seungwoo Jang , Hyosik Mun , Younggeun Park , Jooho Lee
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： HARNESS, DICKEY & PIERCE, P.L.C.
- 优先权： KR 20200084344 2020.07.08
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L49/02 ; H10B53/30 ; H01L21/02
摘要：
A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.
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