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公开(公告)号：US11749714B2
公开(公告)日：2023-09-05
申请号：US17853290
申请日：2022-06-29
发明人： Jeongil Bang , Seungwoo Jang , Hyosik Mun , Younggeun Park , Jooho Lee
CPC分类号： H01L28/60 , H01L28/56 , H10B53/30 , H01L21/02197 , H01L21/02266
摘要： A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.
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公开(公告)号：US11417724B2
公开(公告)日：2022-08-16
申请号：US17096239
申请日：2020-11-12
发明人： Jeongil Bang , Seungwoo Jang , Hyosik Mun , Younggeun Park , Jooho Lee
IPC分类号： H01L21/00 , H01L49/02 , H01L27/11507 , H01L21/02
摘要： A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.
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公开(公告)号：US11749713B2
公开(公告)日：2023-09-05
申请号：US17851836
申请日：2022-06-28
发明人： Jeongil Bang , Seungwoo Jang , Hyosik Mun , Younggeun Park , Jooho Lee
CPC分类号： H01L28/60 , H01L28/56 , H10B53/30 , H01L21/02197 , H01L21/02266
摘要： A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.
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公开(公告)号：US20230253447A1
公开(公告)日：2023-08-10
申请号：US18147289
申请日：2022-12-28
发明人： Eunsun Kim , Boeun Park , Cheolhyun An , Hyungjun Kim , Younggeun Park , Jeongil Bang
IPC分类号： H01L21/02
摘要： A method of forming a semiconductor device includes forming a first electrode on a single-crystal structure. A dielectric layer is formed on the first electrode. A second electrode is formed on the dielectric layer. The forming a dielectric layer includes forming a first dielectric layer having a single-crystal perovskite structure on the first electrode, and forming a second dielectric layer on the first dielectric layer. An upper surface of the first dielectric layer adjacent to the second dielectric layer has a greater surface roughness than an upper surface of the second dielectric layer adjacent to the second electrode.
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公开(公告)号：US11658024B2
公开(公告)日：2023-05-23
申请号：US17071310
申请日：2020-10-15
发明人： Jeonggyu Song , Kyooho Jung , Yongsung Kim , Jeongil Bang , Jooho Lee , Junghwa Kim , Haeryong Kim , Myoungho Jeong
IPC分类号： H01L21/02 , H01L29/786 , H01L29/66 , H01L21/768
CPC分类号： H01L21/02181 , H01L21/0245 , H01L21/02381 , H01L21/02389 , H01L21/02403 , H01L21/02472 , H01L21/02667 , H01L21/76871 , H01L29/66969 , H01L29/7869
摘要： A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.
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