- 专利标题： Method for forming semiconductor structure
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申请号： US17489813申请日： 2021-09-30
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公开(公告)号： US11749741B2公开(公告)日： 2023-09-05
- 发明人: Zhe Wang , Lu Zou
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： CN 2111048449.1 2021.09.08
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; H01L29/66 ; H01L29/78 ; H01L21/02
摘要：
The invention provides a method for forming a semiconductor structure. The method includes providing a substrate, forming a gate structure on the substrate, respectively forming an epitaxial layer on both sides of the gate structure, and performing a pre-amorphization doping step on the substrate. After the pre-amorphization doping step, a defect is generated in the epitaxial layer, an outer spacer is formed beside the gate structure, and a chemical cleaning step is performed to remove a part of the epitaxial layer, and the defect in the epitaxial layer is removed.
公开/授权文献
- US20230070135A1 Method for forming semiconductor structure 公开/授权日：2023-03-09
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