Invention Grant
- Patent Title: Spin element and reservoir element
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Application No.: US16981310Application Date: 2020-01-24
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Publication No.: US11751488B2Publication Date: 2023-09-05
- Inventor: Kosuke Hamanaka , Tomoyuki Sasaki , Yohei Shiokawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- International Application: PCT/JP2020/002513 2020.01.24
- International Announcement: WO2021/149242A 2021.07.29
- Date entered country: 2020-09-16
- Main IPC: H10N52/80
- IPC: H10N52/80 ; H10B61/00 ; H10N50/85 ; H10N52/00

Abstract:
A spin element according to the present embodiment includes a wiring, a laminate including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part with the first ferromagnetic layer therebetween in a plan view in a lamination direction, and an intermediate layer which is in contact with the wiring and is between the first conductive part and the wiring, wherein a diffusion coefficient of a second element including the intermediate layer with respect to a first element including the wiring is smaller than a diffusion coefficient of a third element constituting the first conductive part with respect to the first element or a diffusion coefficient of the third element including the first conductive part with respect to the second element constituting the wiring is smaller than a diffusion coefficient of the third element with respect to the first element constituting the intermediate layer.
Public/Granted literature
- US20220406993A1 SPIN ELEMENT AND RESERVOIR ELEMENT Public/Granted day:2022-12-22
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