公开(公告)号：US11793088B2

公开(公告)日：2023-10-17

申请号：US17978496

申请日：2022-11-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa

IPC: G11C11/16 ,  H10N52/00 ,  G11C11/18 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85 ,  H10N52/80

CPC classification number: H10N52/101 ,  G11C11/161 ,  G11C11/18 ,  H10B61/22 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85 ,  H10N52/80 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.

公开(公告)号：US11676751B2

公开(公告)日：2023-06-13

申请号：US17188511

申请日：2021-03-01

Applicant: TDK CORPORATION

Inventor： Zhenyao Tang ,  Yohei Shiokawa ,  Tomoyuki Sasaki

IPC: H01F10/32 ,  G11C11/15 ,  G01R33/09

CPC classification number: H01F10/329 ,  G01R33/091 ,  G11C11/15 ,  H01F10/3254

Abstract: A magnetic device is equipped with a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; and an insulator which covers at least a part of side surfaces of the stacked body, in which the insulator has a space outside the side surface of the stacked body.

公开(公告)号：US11489109B2

公开(公告)日：2022-11-01

申请号：US16952274

申请日：2020-11-19

Applicant: TDK CORPORATION

Inventor： Yohei Shiokawa ,  Minoru Ota ,  Tomoyuki Sasaki ,  Yoshitomo Tanaka

IPC: H01L43/10 ,  G01R33/09 ,  G11C11/16 ,  H01L43/08 ,  H01F10/32 ,  H01L27/22 ,  G11C13/00

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

公开(公告)号：US11264071B2

公开(公告)日：2022-03-01

申请号：US16912832

申请日：2020-06-26

Applicant: TDK CORPORATION

Inventor： Yohei Shiokawa

IPC: G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  G01R33/09 ,  H01L43/04 ,  H01L27/22 ,  H01L43/10

Abstract: A magnetoresistance effect element where asymmetry of an inversion current due to a leakage magnetic field from a magnetization fixed layer is decreased. A magnetoresistance effect element includes a first ferromagnetic layer whose magnetization direction is variable, a second ferromagnetic layer whose magnetization direction is fixed, and a nonmagnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer which are laminated in a first direction which is a lamination direction, where both the first ferromagnetic layer and the second ferromagnetic layer are curved so that central portions of the first and second ferromagnetic layers protrude with respect to outer circumferential portions in the first direction, and protruding directions of the central portions are opposite to each other so that a distance between the outer circumferential portions is larger than a distance between the central portions in the first direction.

公开(公告)号：US11250897B2

公开(公告)日：2022-02-15

申请号：US16953851

申请日：2020-11-20

Applicant: TDK CORPORATION

Inventor： Yohei Shiokawa ,  Tomoyuki Sasaki

IPC: G11C11/16 ,  H01L43/04 ,  H01L43/10 ,  H01L21/8239 ,  H01L29/82 ,  H01L43/08 ,  H01L27/105 ,  H01L27/22

Abstract: Provided is a spin current magnetization rotational element, including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring which extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, the first ferromagnetic metal layer being located on one surface of the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, a number of a plurality of the interfacial spin generation layers is two or more, and at least one of the plurality of the interfacial spin generation layer is made of a compound.

公开(公告)号：US11145345B2

公开(公告)日：2021-10-12

申请号：US16829188

申请日：2020-03-25

Applicant: TDK CORPORATION

Inventor： Atsushi Tsumita ,  Yohei Shiokawa ,  Eiji Komura

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  H01L27/11597

Abstract: A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring which extends in a second direction different from the first direction, and the first wiring being configured to sandwich the first ferromagnetic layer with the nonmagnetic layer in the first direction; an electrode which sandwiches the second ferromagnetic layer at least partially with the nonmagnetic layer in the first direction; and a compound part which is positioned inside the electrode and has a lower thermal conductivity than the electrode.

公开(公告)号：US10797231B2

公开(公告)日：2020-10-06

申请号：US16359040

申请日：2019-03-20

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa

IPC: G11C11/15 ,  H01L43/04 ,  G11C11/18 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A spin-orbit torque type magnetization reversal element including a ferromagnetic metal layer with a varying magnetization direction; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the ferromagnetic metal layer and that is joined to the ferromagnetic metal layer; wherein when viewed from the first direction, the spin-orbit torque wiring is asymmetrical in a second direction that is orthogonal to the first direction and the stacking direction, with respect to an axis that passes through a center, in the second direction, of the ferromagnetic metal layer.

公开(公告)号：US10522742B2

公开(公告)日：2019-12-31

申请号：US15778577

申请日：2016-11-25

Applicant: TDK CORPORATION

Inventor： Yohei Shiokawa ,  Tomoyuki Sasaki

IPC: H01L43/08 ,  H01L43/06 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/14 ,  G01R33/09 ,  H03B15/00

Abstract: A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction; and a spin-orbit torque wiring, wherein a first direction is perpendicular to a surface of the layer, the wiring extends in a second direction intersecting the first and is bonded to the layer, wherein the wiring material is a binary alloy represented by the formula AxB1-x, a metal carbide, or metal nitride, wherein A is selected from Al, Ti, and Pt, and B is selected from Al, Cr, Mn, Fe, Co, Ni, Y, Ru, Rh, and Ir and the material has a cubic structure with symmetry of a space group Pm-3m or Fd-3m; or A is selected from Al, Si, Ti, Y, and Ta, and B is selected from C, N, Co, Pt, Au, and Bi and the material has a cubic structure with symmetry of a space group Fm-3m.

公开(公告)号：US10454023B2

公开(公告)日：2019-10-22

申请号：US15976997

申请日：2018-05-11

Applicant: TDK CORPORATION

Inventor： Zhenyao Tang ,  Yohei Shiokawa ,  Tomoyuki Sasaki

IPC: H01L43/02 ,  H01F10/32 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22

Abstract: A spin current magnetization rotational element includes: a ferromagnetic metal layer; a spin-orbit torque wiring configured to extend in a first direction perpendicular to a lamination direction of the ferromagnetic metal layer and formed on one surface of the ferromagnetic metal layer; and a ferromagnetic electrode layer formed outside the ferromagnetic metal layer on any of surfaces of the spin-orbit torque wiring in a top view from the lamination direction. A direction of magnetization of the ferromagnetic metal layer is changeable by spin-orbit torque generated by a spin-orbit interaction in the spin-orbit torque wiring and an influence of spin diffused from the ferromagnetic electrode layer.

公开(公告)号：US12048251B2

公开(公告)日：2024-07-23

申请号：US17345084

申请日：2021-06-11

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa ,  Eiji Komura ,  Keita Suda

IPC: H01L43/08 ,  G11C11/16 ,  G11C11/18 ,  H01L43/04 ,  H10N50/10 ,  H10N50/85 ,  H10N52/00 ,  H01F10/32 ,  H10N52/80

CPC classification number: H10N50/85 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H10N50/10 ,  H10N52/00 ,  H01F10/3254 ,  H10N52/80

Abstract: Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.