Invention Grant
- Patent Title: Apparatus having integrated circuit well structures of vertical and/or retrograde profiles
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Application No.: US16899715Application Date: 2020-06-12
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Publication No.: US11756792B2Publication Date: 2023-09-12
- Inventor: Michael Violette , Vladimir Mikhalev
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/266
- IPC: H01L21/266 ; H01L21/265 ; H01L29/10 ; H01L29/66 ; H01L21/027 ; G11C16/04 ; G11C16/08 ; H10B41/27 ; H10B41/35 ; H10B43/27 ; H10B43/35

Abstract:
Transistors having a control gate isolated from a first region of semiconductor material having a first conductivity type, first and second source/drain regions having a second conductivity type different than the first conductivity type and formed in the first region of semiconductor material, and a second region of semiconductor material having the first conductivity type in contact with the first region of semiconductor material, wherein the first region of semiconductor material is between the control gate and the second region of semiconductor material, wherein the first region of semiconductor material has a first width, and wherein the second region of semiconductor material has a second width, less than or equal to the first width, as well as memory containing such transistors.
Public/Granted literature
- US20200303192A1 APPARATUS HAVING INTEGRATED CIRCUIT WELL STRUCTURES OF VERTICAL AND/OR RETROGRADE PROFILES Public/Granted day:2020-09-24
Information query
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