- 专利标题: Semiconductor die with blast shielding
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申请号: US17138906申请日: 2020-12-31
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公开(公告)号: US11756882B2公开(公告)日: 2023-09-12
- 发明人: Enis Tuncer , Alejandro Hernandez-Luna
- 申请人: TEXAS INSTRUMENTS INCORPORATED
- 申请人地址: US TX Dallas
- 专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址: US TX Dallas
- 代理商 Dawn Jos; Frank D. Cimino
- 主分类号: H01L23/525
- IPC分类号: H01L23/525 ; H01L23/528 ; H01L23/31 ; H01L23/495 ; H01L23/48
摘要:
A semiconductor package includes a metallic pad and leads, a semiconductor die including a semiconductor substrate attached to the metallic pad, and a conductor including a sacrificial fuse element above the semiconductor substrate, the sacrificial fuse element being electrically coupled between one of the leads and at least one terminal of the semiconductor die, and a multilayer dielectric between the sacrificial fuse element and the semiconductor substrate, the multilayer dielectric forming one or more planar gaps beneath a profile of the sacrificial fuse element.
公开/授权文献
- US20220208676A1 SEMICONDUCTOR DIE WITH BLAST SHIELDING 公开/授权日:2022-06-30
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