Invention Grant
- Patent Title: Semiconductor die with blast shielding
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Application No.: US17138906Application Date: 2020-12-31
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Publication No.: US11756882B2Publication Date: 2023-09-12
- Inventor: Enis Tuncer , Alejandro Hernandez-Luna
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Dawn Jos; Frank D. Cimino
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L23/528 ; H01L23/31 ; H01L23/495 ; H01L23/48

Abstract:
A semiconductor package includes a metallic pad and leads, a semiconductor die including a semiconductor substrate attached to the metallic pad, and a conductor including a sacrificial fuse element above the semiconductor substrate, the sacrificial fuse element being electrically coupled between one of the leads and at least one terminal of the semiconductor die, and a multilayer dielectric between the sacrificial fuse element and the semiconductor substrate, the multilayer dielectric forming one or more planar gaps beneath a profile of the sacrificial fuse element.
Public/Granted literature
- US20220208676A1 SEMICONDUCTOR DIE WITH BLAST SHIELDING Public/Granted day:2022-06-30
Information query
IPC分类: