Invention Grant
- Patent Title: Staggered stacked vertical crystalline semiconducting channels
-
Application No.: US17584801Application Date: 2022-01-26
-
Publication No.: US11756961B2Publication Date: 2023-09-12
- Inventor: Tsung-Sheng Kang , Tao Li , Ardasheir Rahman , Praveen Joseph , Indira Seshadri , Ekmini Anuja De Silva
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Samuel Waldbum
- The original application number of the division: US16821604 2020.03.17
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L27/12 ; H01L21/8238 ; H01L29/06 ; H01L29/78 ; H01L21/02 ; H01L29/66
Abstract:
A method includes forming a first semiconducting channel comprising a plurality of vertical nanowires and a second semiconducting channel comprising a plurality of vertical nanowires. The first semiconducting channel and the second semiconducting channel are formed in a stacked configuration. The plurality of vertical nanowires of the first semiconducting channel are formed in alternating positions relative to the plurality of vertical nanowires of the second semiconducting channel.
Public/Granted literature
- US20220149042A1 STAGGERED STACKED VERTICAL CRYSTALLINE SEMICONDUCTING CHANNELS Public/Granted day:2022-05-12
Information query
IPC分类:
