Invention Grant
- Patent Title: Electrode structure, manufacturing method thereof, and thin film transistor
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Application No.: US17255445Application Date: 2020-12-18
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Publication No.: US11757044B2Publication Date: 2023-09-12
- Inventor: Wenbo Liu , Yuanke Huang
- Applicant: TCL China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Guangdong
- Assignee: TCL China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: TCL China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Priority: CN 2011361178.0 2020.11.27
- International Application: PCT/CN2020/137668 2020.12.18
- International Announcement: WO2022/110394A 2022.06.02
- Date entered country: 2020-12-23
- Main IPC: H01L29/786
- IPC: H01L29/786 ; G02F1/1368 ; H01L29/40 ; G02F1/1362 ; H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L29/49

Abstract:
An electrode structure is disclosed, which includes a buffer layer disposed on a substrate; and an electrode disposed on a surface of the buffer layer away from the substrate, an edge of the electrode including an extension surface extending from a surface of the electrode away from the substrate, and the extension surface is in contact with a surface of the buffer layer and forms an included angle with a surface of the buffer layer contacting the electrode. An anti-reflection layer is disposed at the edge of the electrode, the anti-reflection layer surrounds and covers the edge of the electrode, and the anti-reflection layer extends to be in contact with the buffer layer. An undercut structure is formed between an outer surface of the anti-reflection layer and the surface of the buffer layer.
Public/Granted literature
- US20220352381A1 ELECTRODE STRUCTURE, MANUFACTURING METHOD THEREOF, AND THIN FILM TRANSISTOR Public/Granted day:2022-11-03
Information query
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