发明授权
- 专利标题： Semiconductor nanoparticle, method for manufacturing same, and light emitting device
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申请号： US16815359申请日： 2020-03-11
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公开(公告)号： US11757064B2公开(公告)日： 2023-09-12
- 发明人: Tsukasa Torimoto , Tatsuya Kameyama , Yuki Mori , Hiroki Yamauchi , Susumu Kuwabata , Taro Uematsu , Daisuke Oyamatsu
- 申请人： National University Corporation Tokai National Higher Education and Research System , OSAKA UNIVERSITY , NICHIA CORPORATION
- 申请人地址： JP Nagoya
- 专利权人： National University Corporation Tokai National Higher Education and Research System,OSAKA UNIVERSITY,NICHIA CORPORATION
- 当前专利权人： National University Corporation Tokai National Higher Education and Research System,OSAKA UNIVERSITY,NICHIA CORPORATION
- 当前专利权人地址： JP Nagoya; JP Suita; JP Anan
- 代理机构： Hunton Andrews Kurth LLP
- 优先权： JP 19044832 2019.03.12
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; H01L33/00 ; B82Y40/00 ; B82Y15/00
摘要：
Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.
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