Invention Grant
- Patent Title: Reduced-voltage operation of a memory device
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Application No.: US17864041Application Date: 2022-07-13
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Publication No.: US11763897B2Publication Date: 2023-09-19
- Inventor: Ezra E. Hartz , Vipul Patel
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C16/34 ; G11C16/26 ; G11C16/10 ; G11C16/30

Abstract:
Methods, systems, and devices for reduced-voltage operation of a memory device are described. A memory device may operate in different operational modes based on a value of a supply voltage fir the memory device. For example, when the value of the supply voltage exceeds both a first threshold voltage and a second threshold voltage, the memory device may be operated in a normal operation mode. When the value of the supply voltage is between the first threshold voltage and the second threshold voltage, the memory device may be operated in a low voltage operation mode, which may be a reduced performance mode relative to the normal operation mode. When the value of the supply voltage is below the second threshold voltage, the memory device may be deactivated.
Public/Granted literature
- US20220415410A1 REDUCED-VOLTAGE OPERATION OF A MEMORY DEVICE Public/Granted day:2022-12-29
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